Simulation of Heteroepitaxial systems and devices

Last updated 27th Jul 2017
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A pinboard by Ganesh Iyer


A novel FE algorithm is developed to simulate stress state of an HEMT device arising due to defects

In hetero-epitaxial systems interface effects gain prominence and the interplay of stress and defects determines the evolution of the system. During epitaxial growth the coherency stresses can be r...