Heteroepitaxial systems and devices

Last updated 27th Jul 2017
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A pinboard by V M Ganesh Iyer

Research scholar in department of Materials science and Engineering in IITK.


A FE algorithm is used to simulate the stress state of HEMT arising from several defects/conditions

In hetero-epitaxial systems interface effects gain prominence and the interplay of stress and defects determines the evolution of the system. During epitaxial growth the coherency stresses can be r...