Weak Antilocalization and Universal Conductance Fluctuations in Bismuth Telluro-Sulfide Topological Insulators

Research paper by Tanuj Trivedi, Sushant Sonde, Hema C. P. Movva, Sanjay K. Banerjee

Indexed on: 21 Jan '16Published on: 21 Jan '16Published in: Physics - Mesoscopic Systems and Quantum Hall Effect


We report on van der Waals epitaxial growth, materials characterization and magnetotransport experiments in crystalline nanosheets of Bismuth Telluro-Sulfide (BTS). Highly layered, good-quality crystalline nanosheets of BTS are obtained on SiO$_2$ and muscovite mica. Weak-antilocalization (WAL), electron-electron interaction-driven insulating ground state and universal conductance fluctuations are observed in magnetotransport experiments on BTS devices. Temperature, thickness and magnetic field dependence of the transport data indicate the presence of two-dimensional surface states along with bulk conduction, in agreement with theoretical models. An extended-WAL model is proposed and utilized in conjunction with a two-channel conduction model to analyze the data, revealing a surface component and evidence of multiple conducting channels. A facile growth method and detailed magnetotransport results indicating BTS as an alternative topological insulator material system are presented.