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Vacuum microelectronic device and method

Imported: 24 Feb '17 | Published: 06 Jan '04

Albert Alec Talin, James E. Jaskie, Bernard F. Coll

USPTO - Utility Patents

Abstract

A vacuum microelectronic device (

10,40) emits electrons (

37) from surfaces of nanotube emitters (

17, 18). Extracting electrons from the surface of each nanotube emitter (

17) results is a small voltage variation between each emitter utilized in the device (

10, 40). Consequently, the vacuum microelectronic device (

10,40) has a more controllable turn-on voltage and a consistent current density from each nanotube emitter (

17,18).

Description

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 schematically illustrates an enlarged cross-sectional isometric portion of an embodiment of a vacuum microelectronic device in accordance with the present invention;

FIG. 2 schematically illustrates an enlarged cross-sectional isometric portion of an alternant embodiment of a vacuum microelectronic device in accordance with the present invention; and

FIG. 3 schematically illustrates an enlarged cross-sectional isometric portion of an alternant embodiment of a nanotube emitter in accordance with the present invention.

Claims

1. A method of forming a vacuum microelectronic device comprising:

2. The method of claim 1 wherein forming the at least one nanotube emitter includes forming the at least one nanotube emitter overlying a substrate and further including:

3. The method of claim 2 further including forming the gate electrode overlying the at least one nanotube emitter and having an opening through the gate electrode wherein the opening overlies a portion of the at least one nanotube emitter.

4. The method of claim 1 wherein extracting electrons from surfaces of the at least one nanotube emitter includes applying a voltage proximal to the ends.

5. The method of claim 1 wherein electrically contacting the at least one nanotube emitter includes forming electrical contacts to the at least one nanotube emitter in a first plane.

6. The method of claim 5 wherein forming the at least one nanotube emitter includes forming the at least one nanotube emitter overlying a substrate and further including:

7. The method of claim 1 further including heating the at least one nanotube.

8. A method of forming a vacuum microelectronic device comprising:

9. The method of claim 8 further including applying the same voltage to the ends of the at least one nanotube emitter.

10. The method of claim 8 wherein electrically contacting the at least one nanotube emitter includes forming electrical contacts to the at least one nanotube emitter in a first plane.

11. The method of claim 8 further including disposing a gate electrode proximal to the at least one nanotube emitter, and disposing an anode overlying each attachment site.

12. The method of claim 8 further including heating the at least one nanotube emitter.