Phisut Narabadeesuphakorn, Supachok Thainoi; Aniwat Tandaechanurat; Suwit Kiravittaya; Noppadon Nuntawong; Suwat Sopitopan; Visittapong Yordsri; Chanchana Thanachayanont; Songphol Kanjanachuchai; Somchai Ratanathammaphan; Somsak Panyakeow


Publication date: 1 April 2018 Source:Journal of Crystal Growth, Volume 487 Author(s): Phisut Narabadeesuphakorn, Supachok Thainoi, Aniwat Tandaechanurat, Suwit Kiravittaya, Noppadon Nuntawong, Suwat Sopitopan, Visittapong Yordsri, Chanchana Thanachayanont, Songphol Kanjanachuchai, Somchai Ratanathammaphan, Somsak Panyakeow Growth of InSb/GaAs quantum nanostructures on GaAs substrate by using molecular beam epitaxy with low growth temperature and slow growth rate typically results in a mixture of isolated and paired nano-stripe structures, which are termed as single and twin nano-stripes, respectively. In this work, we investigate the growth conditions to maximize the number ratio between twin and single nano-stripes. The highest percentage of the twin nano-stripes of up to 59% was achieved by optimizing the substrate temperature and the nano-stripe growth rate. Transmission electron microscopy reveals the substantial size and height reduction of the buried nano-stripes. We also observed the Raman shift and photon emission from our twin nano-stripes. These twin nano-stripes are promising for spintronics and quantum computing devices.