Tuning non-volatile memory characteristics via molecular doping of polymer semiconductors based on ambipolar organic field-effect transistors

Research paper by Minji Kang, Dongyoon Khim; Jihong Kim; Hyeon Jun Lee; Ji Young Jo; Kang-Jun Baeg; Dong-Yu Kim

Indexed on: 27 Apr '18Published on: 16 Apr '18Published in: Organic Electronics


Publication date: July 2018 Source:Organic Electronics, Volume 58 Author(s): Minji Kang, Dongyoon Khim, Jihong Kim, Hyeon Jun Lee, Ji Young Jo, Kang-Jun Baeg, Dong-Yu Kim Expandability of organic electronics has stimulated ongoing research for the development of a variety of flexible and/or large-area optoelectronic applications. Among these electronic devices, organic non-volatile memories are emerging as suitable components for solid-state data storage because of their low-cost fabrication, large storage capacity, light weight, and conformable mechanical properties. To fully integrate organic memories with wearable and flexible/stretchable electronic systems, it is important to develop a device in which the properties such as threshold voltage and operating regime are controllable. This leads to improvement in the adaptability of the device to peripheral circuitry and encourages the development of multi-functional organic electronic components. Here, we investigate the tunable electrical properties of charge-trap (electret) memory devices based on organic field-effect transistors, obtained by the doping of an ambipolar polymer semiconductor. The electret memory devices using the doped semiconductor showed a remarkable enhancement in the charge-storage capacity, an excellent charge retention time of more than 107 s, and four-fold increase in charge carrier mobility. The improved memory characteristics associated with the controllable molecular doping could pave the way for the development of next-generation memory devices that are compatible with flexible and printed electronic technology. Graphical abstract