Transistors: Realization of Room-Temperature Phonon-Limited Carrier Transport in Monolayer MoS2 by Dielectric and Carrier Screening (Adv. Mater. 3/2016).

Research paper by Zhihao Z Yu, Zhun-Yong ZY Ong, Yiming Y Pan, Yang Y Cui, Run R Xin, Yi Y Shi, Baigeng B Wang, Yun Y Wu, Tangsheng T Chen, Yong-Wei YW Zhang, Gang G Zhang, Xinran X Wang

Indexed on: 15 Jan '16Published on: 15 Jan '16Published in: Advanced Materials


On page 547, charged impurities in monolayer MoS2 are effectively screened by combining a high-κ dielectric substrate and a high density of carriers, leading to an unprecedented room-temperature electron mobility of ≈150 cm(2) V(-1) s(-1) . Y. Shi, G. Zhang, X. Wang and co-workers also demonstrate phonon-limited transport in monolayer MoS2 for the first time, an important milestone for electronic device applications.