Quantcast

Three-Dimensional Fin-Structured Semiconducting Carbon Nanotube Network Transistor

Research paper by Dongil Lee, Byung-Hyun Lee, Jinsu Yoon, Dae-Chul Ahn, Jun-Young Park, Jae Hur, Myung-Su Kim, Seung-Bae Jeon, Min-Ho Kang, Kwanghee Kim, Meehyun Lim, Sung-Jin Choi, Yang-Kyu Choi

Indexed on: 19 Nov '16Published on: 10 Nov '16Published in: ACS Nano



Abstract

Three-dimensional (3-D) fin-structured carbon nanotube field-effect transistors (CNT-FETs) with purified 99.9% semiconducting CNTs were demonstrated on a large scale 8 in. silicon wafer. The fabricated 3-D CNT-FETs take advantage of the 3-D geometry and exhibit enhanced electrostatic gate controllability and superior charge transport. A trigated structure surrounding the randomly networked single-walled CNT channel was formed on a fin-like 3-D silicon frame, and as a result, the effective packing density increased to almost 600 CNTs/μm. Additionally, highly sensitive controllability of the threshold voltage (VTH) was achieved using a thin back gate oxide in the same silicon frame to control power consumption and enhance performance. Our results are expected to broaden the design margin of CNT-based circuit architectures for versatile applications. The proposed 3-D CNT-FETs can potentially provide a desirable alternative to silicon based nanoelectronics and a blueprint for furthering the practical use of emerging low-dimensional materials other than CNTs.

Figure 10.1021/acsnano.6b05429.2.jpg
Figure 10.1021/acsnano.6b05429.3.jpg
Figure 10.1021/acsnano.6b05429.4.jpg
Figure 10.1021/acsnano.6b05429.5.jpg
Figure 10.1021/acsnano.6b05429.6.jpg