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Thermal decomposition of tetraethoxysilane (TEOS) on Si(111)-(7×7)

Research paper by J. Spitzmüller, J. Braun, H. Rauscher, R.J. Behm

Indexed on: 01 Mar '98Published on: 01 Mar '98Published in: Applied Physics A



Abstract

formation by chemical vapor deposition, on Si(111)-(7×7). Annealing after predominantly dissociative adsorption at room temperature, where triethoxysiloxane and ethyl groups are the main adsorbate species, leads to further decomposition with various products evolving, including diethoxysiloxane and further ethyl groups. This goes along with structural changes on the (7×7) reconstructed surface. A characteristic new structural element, with a maximum on interstitial sites, is interpreted as the very beginning of surface oxide formation.