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The effective excitonic g factors of Mn-doped InAs nanowires

Research paper by Wen Xiong

Indexed on: 23 Mar '17Published on: 23 Feb '17Published in: Superlattices and Microstructures



Abstract

Based on the derived eight-band k·pk·p Hamiltonian, the electronic structures of Mn-doped InAs nanowires in the magnetic field are calculated. We find the lowest optical transition will be split to four individual transitions when the magnetic field is applied along z axis, and two of them are σ   polarized light. Furthermore, the Zeeman splitting energy at the ΓΓ point of two σ polarized light will increase nonlinearly as the increase of the magnetic field. Additionally, an effective excitonic g   factor at the ΓΓ point is defined, and the effective excitonic g factors will decrease greatly with the increase of the radius of nanowires and the decrease of the concentration of manganese ions, while the effective excitonic g factors decrease slightly when the magnetic field increases. Interestingly, the effective excitonic g factors can experience a substantial decrease when the temperature increases from 10 K to 100 K and is almost not affected when the temperature varies from 100 K to 300 K. Therefore, we can infer that large effective excitonic g factors can be obtained when small radius of nanowires, high concentration of manganese ions and low temperature are satisfied.

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