Indexed on: 01 Feb '05Published on: 01 Feb '05Published in: Semiconductors
Expressions for the relaxation time, electron mobility, and static electrical conductivity along a semiconductor quantum wire are derived in relation to a random field of Gaussian fluctuations in the wire’s thickness. In the case of nondegenerate statistics for charge carriers at relatively low temperatures (T), electron mobility is given by un ∝ T1/2. In the limiting case of a strong magnetic field H directed along the wire, the factor H−1/2 appears in the mobility expression. It is shown that the considered mechanism of charge-carrier relaxation is important for the electrical conductivity of a fairly thin and pure quantum wire at low temperatures.