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The Effect of Different Wavelengths on Porous Silicon Formation Process

Research paper by Oday A. Al-Owaedi, Abbas H. Rahim, Adel H. Omran

Indexed on: 02 Dec '16Published on: 02 Dec '16Published in: arXiv - Physics - Other



Abstract

Porous silicon layers (PS) have been prepared in this work via Photoelectrochemical etching process (PEC) of n type silicon wafer of 0.8 ohm.cm resistivity in hydrofluoric (HF) acid of 24.5 precent concentration at different etching times (5 to 25 min.). The irradiation has been achieved using Tungsten lamp with different wavelengths (450 nm, 535 nm and 700 nm). The morphological properties of these layers such as surface morphology, Porosity, layer thickness, and also the etching rate have been investigated using optical microscopy and the gravimetric method.