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Temperature Dependent Electrical Properties of PZT Wafer

Research paper by T. Basu, S. Sen, A. Seal, A. Sen

Indexed on: 06 Jan '16Published on: 06 Jan '16Published in: Journal of Electronic Materials



Abstract

The electrical and electromechanical properties of lead zirconate titanate (PZT) wafers were investigated and compared with PZT bulk. PZT wafers were prepared by tape casting technique. The transition temperature of both the PZT forms remained the same. The transition from an asymmetric to a symmetric shape was observed for PZT wafers at higher temperature. The piezoelectric coefficient (d33) values obtained were 560 pc/N and 234 pc/N, and the electromechanical coupling coefficient (kp) values were 0.68 and 0.49 for bulk and wafer, respectively. The reduction in polarization after fatigue was only ~3% in case of PZT bulk and ~7% for PZT wafer.