Indexed on: 18 Nov '18Published on: 12 Nov '18Published in: Japanese journal of applied physics (2008)
We performed a systematic study on the transport properties of FeSe thin films with controlled degrees of in-plane lattice strain, including both tensile and compressive strains. The structural transition temperature, T s , slightly decreases as the in-plane strain is more compressive. This suggests that the structural transition can be extinguished by a smaller amount of Te substitution for films with more compressive strain, which may lead to higher T c in FeSe 1− x Te x . We also found a clear correlation between T c and the carrier densities suggests that it is essential to increase carrier densities for the T c enhancement of iron chalcogenides.