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Systematic study on transport properties of FeSe thin films with various degrees of strain

Research paper by Fuyuki Nabeshima, Masataka Kawai, Tomoya Ishikawa, Naoki Shikama Atsutaka Maeda

Indexed on: 18 Nov '18Published on: 12 Nov '18Published in: Japanese journal of applied physics (2008)



Abstract

We performed a systematic study on the transport properties of FeSe thin films with controlled degrees of in-plane lattice strain, including both tensile and compressive strains. The structural transition temperature, T s , slightly decreases as the in-plane strain is more compressive. This suggests that the structural transition can be extinguished by a smaller amount of Te substitution for films with more compressive strain, which may lead to higher T c in FeSe 1− x Te x . We also found a clear correlation between T c and the carrier densities suggests that it is essential to increase carrier densities for the T c enhancement of iron chalcogenides.