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Study of Ti/Au, Ti/Al/Au, and Ti/Al/Ni/Au ohmic contacts to n-GaN

Research paper by Z.X. Qin, Z.Z. Chen, Y.Z. Tong, X.M. Ding, X.D. Hu, T.J. Yu, G.Y. Zhang

Indexed on: 08 Jan '03Published on: 08 Jan '03Published in: Applied Physics A



Abstract

The contacts of Ti/Au, Ti/Al/Au, and Ti/Al/Ni/Au films deposited on n-GaN were studied by current–voltage (I–V) and transmission-line-method measurements. The effect of annealing temperature on specific contact resistivity has been investigated by changing the annealing temperature from 400 to 900 °C. Ti/Al/Au and Ti/Al/Ni/Au films were superior to the bilayer (Ti/Au) in ohmic contact characteristics and thermal stability. The Ti/Al/Ni/Au composite showed the best thermal stability due to the fact that Ni plays a more important role than the alloy of Ti/Al in preventing the interdiffusion of Ti, Al, and Au. The lowest contact resistivity (∼10-7Ω cm2) to n-GaN was obtained for the Ti/Al/Ni/Au sample by short-time/high-temperature annealing. The formation mechanism of ohmic contacts to n-GaN is also discussed.