Indexed on: 01 Oct '05Published on: 01 Oct '05Published in: Semiconductors
The lattice parameters and band gap are experimentally determined for Si-Si1−xGex structures in relation to the component ratiox (0 ≤ x ≤ 1). The distribution of components over the hickness of the Si1−xGex alloys and certain photoelectric properties are studied. The experimental data indicate that the structures obtained are of high quality. Graded-gap Si1−xGex alloys (0 ≤ x ≤ 1) can be used for the fabrication of photoelectric devices sensitive in the visible and near-IR regions. They can also be used as substrates for GaAs and GaAs-based layers.