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Study of certain properties of Si-Si1−xGex (0 ≤ x ≤ 1) structures grown from a restricted tin-based solution-melt by liquid-phase epitaxy

Research paper by B. Sapaev, A. S. Saidov

Indexed on: 01 Oct '05Published on: 01 Oct '05Published in: Semiconductors



Abstract

The lattice parameters and band gap are experimentally determined for Si-Si1−xGex structures in relation to the component ratiox (0 ≤ x ≤ 1). The distribution of components over the hickness of the Si1−xGex alloys and certain photoelectric properties are studied. The experimental data indicate that the structures obtained are of high quality. Graded-gap Si1−xGex alloys (0 ≤ x ≤ 1) can be used for the fabrication of photoelectric devices sensitive in the visible and near-IR regions. They can also be used as substrates for GaAs and GaAs-based layers.