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Silicon based films formed from iodosilane precursors and method of making the same

Imported: 25 Feb '17 | Published: 01 Jul '03

Barry C. Arkles, Alain E. Kaloyeros

USPTO - Utility Patents

Abstract

A method for near atmospheric pressure chemical vapor deposition of a silicon based film onto a substrate includes introducing into a deposition chamber at about atmospheric pressure: (i) a substrate; (ii) an iodosilane precursor in the vapor state having at least three iodine atoms bound to silicon; and (iii) at least one reactant gas; and maintaining a deposition temperature within the chamber from about 250° C. to about 650° C. for a period of time sufficient to deposit a silicon based film on the substrate. Silicon based films formed by near atmospheric pressure chemical vapor deposition using an iodosilane precursor in a vapor state and methods for forming silicon-based films using ultraviolet assisted chemical vapor deposition are also included.

Claims

1. A method for near atmospheric pressure chemical vapor deposition of a silicon based film onto a substrate, comprising:

2. A method for near atmospheric pressure chemical vapor deposition of a silicon-based film selected from the group consisting of silicon-nitrogen based films, comprising

3. The method according to claim 2, wherein the iodosilane precursor has a formula:

I

(4-n)SiX

n  (I)

wherein n is 0 or 1 and X is selected from the group consisting of Br, Cl and SiI

3.

4. The method according to claim 2, wherein the substrate comprises a material selected from the group consisting of metals, metal alloys, transparent glass, display glass, borosilicate glass, temperature-resistant flat panels, quartz, silicon, silicon dioxide, silicon nitrogen materials, gallium arsenide, and polymeric materials.

5. The method according to claim 3, wherein the substrate is transparent glass.

6. The method according to claim 2, wherein the reactant gas flitter comprises a gas selected from the group consisting of nitrogen, argon, helium, neon, krypton, and xenon.

7. The method according to claim 2, wherein the deposition temperature within the chamber is maintained at from about 350° C. to about 600° C.

8. The method according to claim 2, wherein the deposition temperature within the chamber is maintained at from about 350° C. to about 550° C.

9. The method according to claim 2, wherein the at least one reactant gas is selected from the group consisting of ammonia, and hydrazine.

10. The method according to claim 2, further comprising

11. A method for near atmospheric pressure chemical vapor deposition of a silicon based film onto a substrate, comprising

I

(4-n)SiX

n  (I)

12. The method according to claim 11, wherein a deposition temperature within the chamber is between about 100° C. and about 600° C.

13. The method according to claim 11, wherein the substrate is transparent and the ultraviolet radiation is provided by a radiation source such that the radiation passes through the transparent substrate to the interface between the substrate and the precursor.

14. The method according to claim 13, wherein the transparent substrate is display glass.

15. The method according to claim 11, wherein the ultraviolet radiation passing beyond the interface into the chamber is reflected back to the interface.

16. The method according to claim 11, wherein the ultraviolet radiation has a wavelength from about 194 nm to about 254 nm.

17. A method for near atmospheric pressure chemical vapor deposition of a silicon-based film selected from the group consisting of silicon-nitrogen based films, comprising

I

(4-n)SiX

n  (I)