Semiconductor device

To provide excellent reliability and high yield of a semiconductor device that has a multi-wiring structure by using a fluorine-containing silicon oxide film as an interlayer insulating film. A fluorine-containing silicon oxide film is formed so as to cover a lower layer metal wiring. A TEOS film is formed on the fluorine-containing silicon oxide film. After planarizing the TEOS film with the CMP method, an SiH

4-based silicon oxide film that is suitable for capturing fluorine is formed on the TEOS film. Metal wirings are formed on the SiH

4-based silicon oxide film. A predetermined heat treatment is performed to capture fluorine inside the SiH

4-based silicon oxide film. The SiH

4-based silicon oxide film is patterned to the same pattern as the metal wirings. After diffusing fluorine into the atmosphere from the exposed area of the TEOS film, a silicon nitride film is formed on the metal wirings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a cross-sectional view of a conventional semiconductor device of a two-layer wiring structure;

FIGS. 2 through 4 are cross-sectional views for describing a method for manufacturing the semiconductor devise shown in FIG. 1;

FIG. 5 is a cross-sectional view for describing a problem arising in the semiconductor device shown in FIG. 1;

FIG. 6 is a cross-sectional view showing a major part of a semiconductor device according to a first embodiment of the present invention;

FIG. 7 is a diagram for illustrating problems involved in a manufacturing method employed in the first embodiment;

FIG. 8 is a cross-sectional view showing a major part of a semiconductor device according to a second embodiment of the present invention;

FIG. 9 is a cross-sectional view showing a major part of a semiconductor device according to a third embodiment of the present invention;

FIG. 10 is a cross-sectional view showing a major part of a semiconductor device according to a fourth embodiment of the present invention;

FIG. 11 is a cross-sectional view showing a major part of a semiconductor device according to a fifth embodiment of the present invention;

FIG. 12 is a diagram illustrating the major part of a method for manufacturing a semiconductor device according to a sixth embodiment of the present invention;

FIG. 13 is a diagram illustrating the major part of a method for manufacturing a semiconductor device according to a seventh embodiment of the present invention;

FIG. 14 is a diagram illustrating the major part of a method for manufacturing a semiconductor device according to a eighth embodiment of the present invention;

FIG. 15 is a diagram showing a distribution of fluorine concentrations employed in a ninth embodiment of the present invention; and

FIGS. 16A and 16B are diagrams showing a distribution of fluorine concentrations employed in a tenth embodiment of the present invention.

1. A semiconductor device having an interlayer oxide film formed of a fluorine-containing silicon oxide film, comprising:

2. The semiconductor device according to claim 1, further comprising:

3. The semiconductor device according to claim 1, further comprising:

4. The semiconductor device according to claim 1, further comprising:

5. A semiconductor device having an interlayer oxide film formed of a fluorine-containing silicon oxide film, comprising: