Self-localized carrier states in disordered ferroelectrics

Research paper by V. A. Stephanovich

Indexed on: 01 Mar '97Published on: 01 Mar '97Published in: JETP Letters

Abstract

A theory of self-localized states of free carriers near polarization fluctuations (fluctuons) in disordered ferroelectrics is developed. Calculations are carried out for the model disordered ferroelectric K1− xLixTaO3 (x≪0.05). The basic characteristics of the fluctuon — the energy and radius of the fluctuon state — are calculated as functions of the impurity dipole concentration and temperature. The theory predicts the appearence of stable fluctuon states in both the mixed ferroelectric-dipole-glass phase (a dipole glass is the electric analog of a spin glass) and the dipole-glass state of disordered ferroelectrics. The possible role of fluctuons in kinetic phenomena such as conductivity in these substances is discussed.