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Recent Emission Channeling Studies in Wide Band Gap Semiconductors

Research paper by U. Wahl, J. G. Correia, E. Rita, E. Alves, J. C. Soares, B. De Vries, V. Matias, A. Vantomme, and the ISOLDE collaboration

Indexed on: 28 Oct '05Published on: 28 Oct '05Published in: Hyperfine Interactions



Abstract

We present results of recent emission channeling experiments on the lattice location of implanted Fe and rare earths in wurtzite GaN and ZnO. In both cases the majority of implanted atoms are found on substitutional cation sites. The root mean square displacements from the ideal substitutional Ga and Zn sites are given and the stability of the Fe and rare earth lattice location against thermal annealing is discussed.