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Radiation hard pixel sensors using high-resistive wafers in a 150 nm CMOS processing line

Research paper by D. -L. Pohl, T. Hemperek, F. Hügging, J. Janssen, H. Krüger, A. Macchiolo, N. Owtscharenko, I. Caicedo Sierra, L. Vigani, N. Wermes

Indexed on: 16 Feb '17Published on: 16 Feb '17Published in: arXiv - Physics - Instrumentation and Detectors



Abstract

Pixel sensors using 8" CMOS processing technology have been designed and characterized offering the benefits of industrial sensor fabrication, including large wafers, high throughput and yield, as well as low cost. The pixel sensors are produced using a 150 nm CMOS technology offered by LFoundry, Avezzano. The technology provides multiple metal and polysilicon layers as well as MIM capacitors that can be employed for AC-coupling and redistribution layers. Several prototypes have been fabricated and are characterized with minimum ionizing particles before and after irradiation to fluences up to $1.1 \cdot 10^{15}$ $\mathrm{n_{eq}cm^{-2}}$. Comparisons to standard pixel sensors are made. The CMOS-fabricated sensors perform equally well as standard pixel sensors in terms of noise and hit detection efficiency. AC-coupled sensors even reach 100% hit efficiency in a 3.2 GeV electron test-beam before irradiation.