Indexed on: 14 Jul '17Published on: 14 Jul '17Published in: Nanotechnology
We study signatures of ballistic quantum transport of holes through Ge/Si core/shell nanowires at low temperatures. We observe Fabry-Perot interference patterns as well as conductance plateaus at integer multiples of 2e^2/h at zero magnetic field. Magnetic field evolution of these plateaus reveals relatively large effective Lande g-factors. Ballistic effects are observed in nanowires with silicon shell thicknesses of 1 - 3 nm, but not in bare germanium wires. These findings inform the future development of spin and topological quantum devices which rely on ballistic subband-resolved transport.