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Quasiballistic quantum transport through Ge/Si core/shell nanowires.

Research paper by Dharmraj D Kotekar-Patil, Binh-Minh BM Nguyen, Jinkyoung J Yoo, Shadi A SA Dayeh, Sergey M SM Frolov

Indexed on: 14 Jul '17Published on: 14 Jul '17Published in: Nanotechnology



Abstract

We study signatures of ballistic quantum transport of holes through Ge/Si core/shell nanowires at low temperatures. We observe Fabry-Perot interference patterns as well as conductance plateaus at integer multiples of 2e^2/h at zero magnetic field. Magnetic field evolution of these plateaus reveals relatively large effective Lande g-factors. Ballistic effects are observed in nanowires with silicon shell thicknesses of 1 - 3 nm, but not in bare germanium wires. These findings inform the future development of spin and topological quantum devices which rely on ballistic subband-resolved transport.