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Quantum efficiency measurement of subcells in multi-junction solar cells based on III-V/Si

Research paper by A I Baranov, A S Gudovskikh, D A Kudryashov, I A Morozov, A M Mozharov K S Zelentsov

Indexed on: 24 Dec '18Published on: 21 Dec '18Published in: Journal of physics. Conference series



Abstract

The work is devoted to development of the post-growth technology for direct study of the top subcell based on p-i-n junction with the GaPAs i-layer in the double-junction solar cell grown on silicon wafer. It allowed to more precisely measure quantum efficiency (QE) of the top subcell without additional IR-illumination for saturation of the bottom subcell in wafer. In result, measured QE of mesa-structure shows more reliable results without artefacts in spectra.