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Quantum chemical study of the properties of an SiO2/Si(100) interface implanted with boron ions

Research paper by A. V. Tkachenko, O. Y. Ananina, A. S. Yanovsky

Indexed on: 26 Mar '10Published on: 26 Mar '10Published in: Bulletin of the Russian Academy of Sciences: Physics



Abstract

Quantum-chemical calculations of the properties of a B+ ion-implanted SiO2/Si(100) interface are presented. Dependencies of the total energy of a B+ ion cluster system on the location of B+ ions in oxygen and silicon vacancies are calculated, along with the geometric and electronic characteristics of the equilibrium cluster states with implanted boron ions.