Process for manufacturing integrated devices comprising microstructures and associated suspended electrical interconnections

Imported: 23 Feb '17 | Published: 22 Oct '02

Benedetto Vigna, Ubaldo Mastromatteo

USPTO - Utility Patents


An integrated device comprises an epitaxial layer forming a first and a second region separated by at least one air gap. The first region forms, for example, a suspended mass of an accelerometer. A bridge element extends on the air gap and has a suspended electrical connection line electrically connecting the first and the second region and a protective structure of etch-resistant material, which surrounds the electrical connection line on all sides. The protective structure is formed by a lower portion of silicon nitride and an upper portion of silicon carbide, the silicon carbide surrounding the electrical connection line at the upper and lateral sides.



For understanding the invention, an embodiment will now be described, purely by way of a non-exhaustive and non-limiting example, with reference to the accompanying drawings wherein:

FIG. 1 shows a cross-section through a wafer incorporating a suspended mass with electrical connections of a known type;

FIG. 2 shows a cross-section similar to FIG. 1, relating to a different known solution;

FIG. 3 shows a cross-sectional perspective view through an integrated device according to an embodiment of the invention;

FIG. 4 shows a cross-sectional perspective view, in the direction opposite to that of FIG. 3, on a smaller scale;




i show cross-sections through the wafer of FIG. 3, in successive manufacture steps; and

FIG. 6 shows a cross-section taken along a plane perpendicular to that of FIG. 5

i, according to line VI—VI, in a successive manufacture step.


1. An integrated device, comprising:

2. An integrated device, comprising:

3. An integrated device, comprising:

4. An integrated device, comprising:

5. An integrated device, comprising: