Imported: 23 Feb '17 | Published: 22 Oct '02
USPTO - Utility Patents
An integrated device comprises an epitaxial layer forming a first and a second region separated by at least one air gap. The first region forms, for example, a suspended mass of an accelerometer. A bridge element extends on the air gap and has a suspended electrical connection line electrically connecting the first and the second region and a protective structure of etch-resistant material, which surrounds the electrical connection line on all sides. The protective structure is formed by a lower portion of silicon nitride and an upper portion of silicon carbide, the silicon carbide surrounding the electrical connection line at the upper and lateral sides.
For understanding the invention, an embodiment will now be described, purely by way of a non-exhaustive and non-limiting example, with reference to the accompanying drawings wherein:
i show cross-sections through the wafer of
i, according to line VI—VI, in a successive manufacture step.
1. An integrated device, comprising:
2. An integrated device, comprising:
3. An integrated device, comprising:
4. An integrated device, comprising:
5. An integrated device, comprising: