Polarization-pinned emission of a continuous-wave optically pumped nonpolar GaN-based VCSEL using nanoporous distributed Bragg reflectors.

Research paper by Saadat M SM Mishkat-Ul-Masabih, Ting S TS Luk, Morteza M Monavarian, Daniel F DF Feezell

Indexed on: 04 May '19Published on: 03 May '19Published in: Optics express


A nonpolar GaN-based vertical-cavity surface-emitting laser (VCSEL) using nanoporous bottom epitaxial distributed Bragg reflector (DBR) is demonstrated at room temperature (RT) under continuous-wave (CW) optical pumping. The porous layers enable the epitaxial growth of lattice-matched high-reflectance DBRs without sacrificing the conductive properties needed for high-performance VCSELs. The 2-λ cavity VCSEL reported here employs a hybrid design with top dielectric DBR and bottom nanoporous DBR. Single longitudinal mode lasing is observed at 462 nm with a threshold power density of ~5 kW/cm and a FWHM of ~0.12 nm. The emission polarization was pinned in the a-direction at all measured locations.