Polarity Control in Growing Highly Ga-doped ZnO Nanowires with Vapor-liquid-solid Process.

Research paper by Yu-Feng YF Yao, Keng-Ping KP Chou, Huang-Hui HH Lin, Chi-Chung CC Chen, Yean-Woei YW Kiang, Chih-Chung C C CCC Yang

Indexed on: 07 Nov '18Published on: 07 Nov '18Published in: ACS Applied Materials & Interfaces


Surface behavior modification by forming surface transparent conductive nanowires (NWs) is an important technique for many applications, particularly when the polarities of the NWs can be controlled. The polarities of Ga-doped ZnO (GaZnO) NWs grown on templates of different polarities under different growth conditions are studied for exploring a polarity control growth technique. The NWs are formed on Ga- and N-face GaN through the vapor-liquid-solid (VLS) process using Ag nanoparticles as growth catalyst. The NWs grown on templates of different polarities under the Zn- (O-) rich condition are always Zn (O) polar. During the early stage of NW growth, because the lattice sizes among different nucleation islands formed at the triple-phase line are quite different, high-density planar defects are produced when lateral growths from multiple nucleation islands form a GaZnO double-bilayer. In this situation, frequent domain inversions occur and GaZnO polarity is unstable. Under the Zn- (O-) rich condition, because the lateral growth rate of GaZnO in the Zn- (O-) polar structure is higher due to more available dangling bonds, the growth of Zn- (O-) polar structure dominates NW formation such that the NW eventually becomes Zn (O) polar irrespective of the polarity of growth template. Therefore, the polarity of a doped-ZnO NW can be controlled simply by the relative supply rates of Zn and O during VLS growth.