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Piezoelectric aluminum nitride resonator for oscillator.

Research paper by Olivier O Mareschal, Sébastien S Loiseau, Aurélien A Fougerat, Laurie L Valbin, Gaëlle G Lissorgues, Sebastien S Saez, Christophe C Dolabdjian, Rachid R Bouregba, Gilles G Poullain

Indexed on: 10 Mar '10Published on: 10 Mar '10Published in: IEEE transactions on ultrasonics, ferroelectrics, and frequency control



Abstract

This work investigates properties of the thin film elongation acoustic resonator (TFEAR) operating at megahertz frequencies in air. This resonator is composed of a piezoelectric layer of AlN sandwiched between 2 Al electrodes. TFEAR works in the extensional mode excited via AlN d31 piezoelectric coefficient. A 3D finite element method (3D-FEM) analysis using ANSYS software has been performed to model static modal and harmonic behavior of the TFEAR. To consider insertion losses into the substrate, equivalent electrical models based on a modified Butterworth-Van Dyke (MBVD) circuit have been improved by adding extra dissipative elements. Thus, a whole model for the on-wafer characterization setup is given, allowing for automatic de-embedding of the present TFEAR equivalent circuit. Quality factors Q as high as 2500 in air have been recorded with motional resistance lower than 400 ohms. A first oscillator based on a TFEAR resonator was also designed and tested.