p-Diamond as candidate for plasmonic terahertz and far infrared applications

Research paper by Michael Shur, Sergey Rudin, Greg Rupper, Tony Ivanov

Indexed on: 24 Dec '18Published on: 20 Dec '18Published in: Applied physics letters


Applied Physics Letters, Volume 113, Issue 25, December 2018. High values of the hole mobility, low contact resistance, and high hole sheet densities in diamond two-dimensional hole gas make p-diamond field effect transistors superb candidates for implementing high temperature plasmonic sub-terahertz, terahertz, and far infrared devices. Our calculations show that p-diamond sub-THz transistors are viable contenders, especially for applications in the 200 to 600 GHz atmospheric window which are of special interest for the beyond 5 G sub-THz communications.