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Orthogonal analysis for perovskite structure microwave dielectric ceramic thin films fabricated by the RF magnetron-sputtering method

Research paper by Cui Chuanwen, Shi Feng, Li Yuguo, Wang Shuyun

Indexed on: 05 Jun '09Published on: 05 Jun '09Published in: Journal of Materials Science: Materials in Electronics



Abstract

The perovskite structure microwave dielectric ceramic thin films have been deposited by radio frequency (RF) magnetron sputtering on SiO2(110) substrates. Subsequently, orthogonal analysis has been adopted to optimize the process parameters. The experimental results indicate that sputtering pressure has the greatest impact on comprehensive evaluation indicators such as the film quality, whereas sputtering power has a lower effect; the ratio of O2/Ar and substrate temperature have the least impact on the process. Thus, the optimal process parameters to prepare perovskite structure dielectric thin films by RF magnetron sputtering are as follows: 200 W of sputtering power, 0.25 Pa of sputtering pressure, Ar as working gas, and substrate temperature of 610 °C.