Quantcast

Ohmic contact to a II-VI compound semiconductor device and a method of manufacturing the same

Imported: 23 Feb '17 | Published: 22 Oct '02

Yan-Kuin Su, Shoou-Jinn Chang, Wen-Rui Chen

USPTO - Utility Patents

Abstract

An ohmic contact to II-VI compound semiconductor device for lowering the contact resistance and increasing the efficiency and reliability of a photoelectric device. The method of manufacturing the ohmic contact to a II-VI compound semiconductor device comprises the steps of forming a II-VI compound semiconductor layer on the substrate, forming a mask layer with a contact via on the II-VI compound semiconductor layer, forming a metal-contact layer on the mask layer and II-VI compound semiconductor layer, and removing the metal-contact layer over the mask layer, wherein the remainder of the metal-contact layer forms the ohmic contact. In order to prevent oxidization of the metal-contact layer, a shield layer comprised of a noble metal can be disposed on the metal-contact layer.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic sectional view of p-type ZnSe semiconductor with a GaAs substrate.

FIG. 2A is a schematic sectional view of a photoresist layer formed on a p-type ZnSe semiconductor layer.

FIG. 2B is a plane view of photoresist structure applied on the surface of p-type ZnSe.

FIG. 3 is a schematic sectional view showing CuGe formed on the surface of p-type ZnSe.

FIG. 4 is a schematic sectional view showing the thin films of Au and Pt formed on the surface of CuGe.

FIG. 5A is a schematic sectional view according to the first embodiment of present invention.

FIG. 5B is a plane view diagram according to the first embodiment of the present invention.

FIG. 6 is a schematic sectional view of n-type ZnSe semiconductor with a GaAs substrate.

FIG. 7A is a schematic sectional view of a photoresist layer formed on an n-type ZnSe semiconductor layer.

FIG. 7B is a plane view of photoresist structure applied on the surface of n-type ZnSe.

FIG. 8 illustrates the configuration of CuGe, which is deposited onto the surface of n+-ZnSe so as to form the p-type ZnSe.

FIG. 9 is a schematic sectional view of Pt/Au formed onto the surface of CuGe.

FIG. 10 is a schematic sectional view according to the second embodiment of present invention.

FIG. 11 is an I-V curve off p-type ZnSe, which is varied with temperature, deposited by CuGe/Pt/Au.

Claims

1. An ohmic contact to a II-VI compound semiconductor device, which is suitable for a semiconductor substrate, comprising:

2. An ohmic contact to II-VI compound semiconductor device according to claim 1, wherein said II-VI compound semiconductor layer is a p-type II-VI compound semiconductor layer.

3. An ohmic contact to II-VI compound semiconductor device according to claim 1, further including a shield layer disposed on said metal-contact layer.

4. An ohmic contact to II-VI compound semiconductor device according to claim 3, wherein said shield layer includes at least one noble metal layer.

5. An ohmic contact to II-VI compound semiconductor device according to claim 1, wherein said II-VI compound semiconductor layer is a ZnSe semiconductor layer.