Nonvolatile Silicon Memory Using GeOx-Cladded Ge Quantum Dots Self-Assembled on SiO2 and Lattice-Matched II–VI Tunnel Insulator

Research paper by M. Gogna, E. Suarez, P.-Y. Chan, F. Al-Amoody, S. Karmakar, F. Jain

Indexed on: 15 Jun '11Published on: 15 Jun '11Published in: Journal of Electronic Materials


This paper presents fabrication and characterization of a quantum dot-based floating gate nonvolatile memory device with site-specific self-assembly of germanium oxide-cladded germanium (GeOx-Ge) quantum dots on SiO2 and ZnS/ZnMgS/ZnS (II–VI lattice-matched high-κ dielectric) tunnel insulator material. These monodispersed and individually cladded quantum dots have the potential to store charge uniformly in the floating gate and are well suited for nonvolatile memory applications.