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Multiscale characterization of synthetic diamonds obtained by gas-jet deposition

Research paper by Yu V Fedoseeva, K V Kubrak, L G Bulusheva, E A Maksimovskiy, D A Smirnov, A K Rebrov A V Okotrub

Indexed on: 30 Nov '18Published on: 28 Nov '18Published in: Journal of physics. Conference series



Abstract

Morphology, structure and surface composition of the synthetic polycrystalline diamond films grown by a gas-jet deposition have been studied with help of scanning electron microscopy, Raman scattering, X-ray photoelectron spectroscopy and near edge X-ray absorption fine structure spectroscopy. The diamond films were deposited from a high-speed jet of activated CH 4 + H 2 gaseous mixture on the Mo substrates heated to 900 °C with CH 4 flow rate of 8 sccm and 1000 °C with 12 sccm of CH 4 . The high concentration of CH 4 in gas flow and the high substrate temperature resulted in an increase in the size and improvement of quality of the diamond crystals. A presence of sp 2 hybridized, hydrogenated and oxygenated carbon atoms on the surface of diamond films was revealed.