Quantcast

MOVPE growth of laser structures for high-power applications at different ambient temperatures

Research paper by F. Bugge, P. Crump, C. Frevert, S. Knigge, H. Wenzel, G. Erbert, M. Weyers

Indexed on: 20 Mar '16Published on: 02 Jan '16Published in: Journal of Crystal Growth



Abstract

Laser structures for different operating temperatures were developed. Higher temperatures need an increase in barrier height to reduce carrier leakage. Best results for an emission wavelength of ≈800 nm were obtained using an asymmetric structure containing an n-InGaP and a p-Al0.5Ga0.5As waveguide. Such structures show 10 W output power for a single laser diode and >100 W for a laser bar at 50 °C ambient temperature and also a good aging behavior.

Figure 10.1016/j.jcrysgro.2015.12.036.0.jpg
Figure 10.1016/j.jcrysgro.2015.12.036.1.jpg
Figure 10.1016/j.jcrysgro.2015.12.036.2.jpg
Figure 10.1016/j.jcrysgro.2015.12.036.3.jpg
Figure 10.1016/j.jcrysgro.2015.12.036.4.jpg