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Modulation Doping of a Mott Quantum Well by a Proximate Polar Discontinuity

Research paper by T. Higuchi, Y. Hotta, T. Susaki, A. Fujimori, H. Y. Hwang

Indexed on: 20 Oct '08Published on: 20 Oct '08Published in: Physics - Strongly Correlated Electrons



Abstract

We present evidence for hole injection into LaAlO3/LaVO3/LaAlO3 quantum wells near a polar surface of LaAlO3 (001). As the surface is brought in proximity to the LaVO3 layer, an exponential drop in resistance and a decreasing positive Seebeck coefficient is observed below a characteristic coupling length of 10-15 unit cells. We attribute this behavior to a crossover from an atomic reconstruction of the AlO2-terminated LaAlO3 surface to an electronic reconstruction of the vanadium valence. These results suggest a general approach to tunable hole-doping in oxide thin film heterostructures.