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Method of manufacturing multilevel interconnects including performing a surface treatment to form a hydrophilic surface layer

Imported: 25 Feb '17 | Published: 06 Aug '02

Cheng-Yuan Tsai, Chin-Hsiang Lin, Ming-Sheng Yang

USPTO - Utility Patents

Abstract

A method of manufacturing multilevel interconnects. A single or dual damascene interconnect structure is formed in a first dielectric layer. A cap layer or middle etch stop layer is formed over the interconnect structure and the first dielectric layer. The cap layer or the middle etch stop layer is treated with nitrogen plasma to convert a hydrophobic surface into a hydrophilic surface. An adhesion promoter layer is formed over the cap layer or middle etch stop layer. A low-k dielectric layer is formed over the adhesion promoter layer. A single or dual damascene structure is formed in the low-k dielectric layer, thereby forming a multilevel interconnect.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings are included to provide a further understanding of the invention, and are incorporated in and constitute a part of this specification. The drawings illustrate embodiments of the invention and, together with the description, serve to explain the principles of the invention. In the drawings,

FIGS. 1A through 1E are schematic cross-sectional views showing the progression of steps for producing multilevel interconnect according to the first embodiment of the present invention;

FIG. 2A through 2C are schematic cross-sectional views showing the progression of steps for producing multilevel interconnect according to the second embodiment of the present invention;

FIG. 3A is a schematic cross-sectional diagram showing the wetting ability of the surface of a silicon carbide layer and a contact angle of adhesion promoter agent with the surface of the silicon carbide layer before a nitrogen plasma treatment; and

FIG. 3B is a schematic cross-sectional diagram showing the wetting ability of the surface of a silicon carbide layer and the contact angle of adhesion promoter agent with the surface of the silicon carbide layer after a nitrogen plasma treatment.

Claims

1. A method of manufacturing multilevel interconnects, comprising the steps of:

2. The method of claim 1, wherein material constituting the cap layer includes silicon carbide.

3. The method of claim 1, wherein the surface treatment step uses a gas selected from a group consisting of N

2, NH

3, and N

2O.

4. The method of claim 3, wherein the surface treatment step is performed at a pressure of about 0.5-10 Torr.

5. The method of claim 3, wherein the surface treatment step includes a radio frequency plasma with a power rating of about 100-2000 W.

6. The method of claim 3, wherein the surface treatment step is conducted at a temperature of between 250° C. to 500° C.

7. The method of claim 3, wherein the surface treatment step has a duration of about 5-180 seconds.

8. The method of claim 1, wherein the second dielectric layer includes a spin-on polymer.

9. A fabrication method for a cap layer, the method comprising steps of:

10. The fabrication method of claim 9, wherein the cap layer includes silicon carbide.

11. The fabrication method of claim 9, wherein the surface treatment step uses a gas selected from a group consisting of N

2, NH

3, and N

2O.

12. The fabrication method of claim 11, wherein the surface treatment step is performed at a pressure of about 0.5-10 Torr.

13. The fabrication method of claim 11, wherein the surface treatment step includes a radio frequency plasma with a power rating of about 100-2000 W.

14. The fabrication method of claim 11, wherein the surface treatment step is conducted at a temperature of between 250° C. to 500° C.

15. The fabrication method of claim 11, wherein the surface treatment step has a duration of about 5-180 seconds.

16. A method of manufacturing multilevel interconnects, comprising the steps of:

17. The method of claim 16, wherein the middle etch stop layer and the cap layer include silicon carbide.

18. The method of claim 16, wherein the surface treatment step uses a gas selected from a group consisting of N

2, NH

3, and N

2O.

19. The method of claim 18, wherein the surface treatment step is performed at a pressure of about 0.5-10 Torr.

20. The method of claim 18, wherein the surface treatment step includes a radio frequency plasma with a power rating of about 100-2000 W.

21. The method of claim 18, wherein the surface treatment step is conducted at a temperature of between 250° C. to 500° C.

22. The method of claim 18, wherein the surface treatment step has a duration of about 5-180 seconds.

23. The method of claim 16, wherein the surface treatment step is performed on the cap layer.

24. The method of claim 16, wherein the first dielectric layer and the second dielectric layer include spin coat polymer.