Indexed on: 18 Jun '15Published on: 18 Jun '15Published in: Journal of Electronic Materials
GaSb has been studied as a new alternative substrate for growing HgCdTe via molecular beam epitaxy (MBE). Cross-sectional transmission electron microscopy (TEM) studies indicate that MBE-grown CdTe buffer layers on GaSb have much lower misfit dislocation density than comparable layers grown on GaAs. The MBE-grown mid-wave infrared (MWIR) HgCdTe layers on GaSb substrates present material quality comparable to those grown on GaAs substrates, which is one of the state-of-the-art alternative substrates currently used to grow HgCdTe for the fabrication of MWIR detectors and focal plane arrays. Typically, HgCdTe materials grown on GaSb are found to have a rocking curve (double crystal x-ray diffraction) full width at half maximum of ~122 arcsec and an etch pit density of ~mid-106 cm–2. Electron backscatter diffraction mapping shows that the lattice misorientation/misfit dislocations near the HgCdTe/CdTe interface are negligible for GaSb substrates in comparison to GaAs substrates, and that the material quality of the HgCdTe layer on GaSb is determined primarily by the material quality of the CdTe buffer layer. These preliminary results are very encouraging considering that this is a relatively recent research effort, and higher quality MBE-grown HgCdTe materials are expected on GaSb substrates with further optimization of HgCdTe growth conditions as well as further improvements in the growth conditions for CdTe buffer layers.