Indexed on: 01 Jul '00Published on: 01 Jul '00Published in: Applied Physics A
Preferentially (105)-oriented SrxBi2+yTa2O9 (SBT) thin films on SiN/SiO2/p-Si(100) prepared by the pulsed laser deposition (PLD) method at a temperature as low as 400 °C, which is the lowest process temperature for growing SBT ferroelectric thin films on a silicon nitride film. Excess Bi promotes crystallization of the SBT film. A metal–ferroelectric–nitride–oxide–semiconductor (MFNOS) structure, which is very important in ferroelectric gate memory FET, has been fabricated by depositing the SBT film on silicon nitride–oxide–silicon. The MFNOS structures show capacitance–voltage (C–V) hysteresis corresponding to ferroelectric hysteresis. A memory window of the C–V hysteresis is improved, to be as high as 3.5 V in the SBT(400 nm)/SiNx(7 nm)/SiO2(18 nm)/Si compared with the window of 2.7 V in the SBT(400 nm)/SiO2(27 nm)/Si (MFOS), where the thicknesses of their insulator layers are nearly the same. Little degradation is induced in the C–V characteristics of the SiNx/SiO2/p-Si structure when depositing the SBT film by PLD at low temperature. It is also found that the SiNx layer acts as a diffusion barrier against component atoms in the SBT film during its deposition. Finally, the MFNOS structure prepared at the low temperature is very promising for a next-generation ferroelectric gate memory FET.