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Light emitting nitride semiconductor device, and light emitting apparatus and pickup device using the same

Imported: 25 Feb '17 | Published: 01 Jul '03

Yuhzoh Tsuda, Shigetoshi Ito

USPTO - Utility Patents

Abstract

There is provided a light emitting device having high luminous efficacy or emission intensity. The device includes a light emitting layer provided between n- and p-type layers of nitride semiconductor formed on a GaN substrate. The light emitting layer is formed of a well layer or a combination of well and barrier layers. The well layer is made of a nitride semiconductor containing an element X, N and Ga, wherein X is As, P or Sb. The ratio of the number of the atoms of element X to the sum of the number of the atoms of element X and N, is not more than 30 atomic percent. The well layer contains Mg, Be, Zn, Cd, C, Si, Ge, Sn, O, S, Se or Te as an impurity for improving the crystallinity of the well layer.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

In the drawings:

FIG. 1 is a schematic cross section of an example of a light emitting diode device grown on a nitride semiconductor substrate;

FIG. 2 is a schematic cross section of an example of a quasi GaN substrate;

FIG.

3(

a) is a schematic cross section showing the process of another example of the quasi GaN substrate, and FIG.

3(

b) is a schematic cross section showing the completed structure thereof;

FIG. 4 is a schematic cross section of another example of the light emitting diode device according to the present invention;

FIG. 5 is a top view of the light emitting diode device shown in FIG. 4;

FIG. 6 is a schematic cross section of an example of a laser diode device according to the present invention;

FIG. 7 schematically shows an optical disc apparatus as one example of an information recording apparatus; and

FIG. 8 represents a relationship between the amount of an impurity added to the light emitting layer, and the crystal system separation and the emission intensity of the device;

Claims

1. A light emitting nitride semiconductor device provided in a form of a nitride semiconductor laser device, comprising:

2. The light emitting nitride semiconductor device of claim 1, wherein a total content of said impurity is 1×10

17 to 5×10

20/cm

3.

3. A light emitting apparatus, comprising the light emitting nitride semiconductor device recited in claim 1 and having an oscillation wavelength of 360 nm to 420 nm or an emission wavelength of 360 nm to 650 nm.