Imported: 25 Feb '17 | Published: 01 Jul '03
USPTO - Utility Patents
There is provided a light emitting device having high luminous efficacy or emission intensity. The device includes a light emitting layer provided between n- and p-type layers of nitride semiconductor formed on a GaN substrate. The light emitting layer is formed of a well layer or a combination of well and barrier layers. The well layer is made of a nitride semiconductor containing an element X, N and Ga, wherein X is As, P or Sb. The ratio of the number of the atoms of element X to the sum of the number of the atoms of element X and N, is not more than 30 atomic percent. The well layer contains Mg, Be, Zn, Cd, C, Si, Ge, Sn, O, S, Se or Te as an impurity for improving the crystallinity of the well layer.
In the drawings:
a) is a schematic cross section showing the process of another example of the quasi GaN substrate, and FIG.
b) is a schematic cross section showing the completed structure thereof;
1. A light emitting nitride semiconductor device provided in a form of a nitride semiconductor laser device, comprising:
2. The light emitting nitride semiconductor device of
3. A light emitting apparatus, comprising the light emitting nitride semiconductor device recited in