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Kinetics of high-temperature precipitation in dislocation-free silicon single crystals

Research paper by V. I. Talanin, I. E. Talanin

Indexed on: 16 Oct '10Published on: 16 Oct '10Published in: Physics of the Solid State



Abstract

The defect structure of dislocation-free silicon single crystals has been calculated using the approximate solution of the Fokker-Planck partial differential equations. It has been demonstrated that the precipitation starts to occur near the crystallization front due to the disappearance of excess intrinsic point defects on sinks whose role is played by oxygen and carbon impurities.