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Investigation of metallization schemes for high temperature devices based on silicon carbide

Research paper by T. Scholz, R. Getto, K. Gottfried, G. Kurz, J. Kriz, V. Lauer

Indexed on: 01 Aug '98Published on: 01 Aug '98Published in: Fresenius' journal of analytical chemistry



Abstract

The suitability of several metallization schemes for high temperature sensors and devices based on silicon carbide was investigated. Auger electron spectroscopy (AES) depth profiling was used for the detection of possible interface reactions and thermal induced diffusion processes. Changes in the structure of the films under the influence of high temperature were observed by transmission electron microscopy (TEM). The maximum operation temperature for the metallization with aluminum as coverlayer was found at 450 °C. The ability of gold with underlying tungsten nitride as diffusion barrier to work at temperatures above 450 °C was shown.