Indexed on: 01 Oct '97Published on: 01 Oct '97Published in: Technical Physics
Two models of tunneling charge exchange on interfacial states buried in the insulator are examined. In one model the spatial distribution of these states is assumed to be uniform and in the other model the volume density of traps decreases exponentially with increasing depth. Analytical expressions are obtained for the width and position of the peak in the normalizedconductance curves in both models, and the accuracy and limitations of these expressions are indicated. A new procedure for investigating interfacial states by the admittance method is proposed, based on the use of G-V characteristics of metal-insulator-semiconductor (MIS) structures measured at a fixed frequency.