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Interfacial exchange coupling induced anomalous anisotropic magnetoresistance in epitaxial γ'-Fe₄N/CoN bilayers.

Research paper by Zirun Z Li, Wenbo W Mi, Xiaocha X Wang, Xixiang X Zhang

Indexed on: 03 Feb '15Published on: 03 Feb '15Published in: ACS Applied Materials & Interfaces



Abstract

Anisotropic magnetoresistance (AMR) of the facing-target reactively sputtered epitaxial γ'-Fe4N/CoN bilayers is investigated. The phase shift and rectangular-like AMR appears at low temperatures, which can be ascribed to the interfacial exchange coupling. The phase shift comes from the exchange bias (EB) that makes the magnetization lag behind a small field. When the γ'-Fe4N thickness increases, the rectangular-like AMR appears. The rectangular-like AMR should be from the combined contributions including the EB-induced unidirectional anisotropy, intrinsic AMR of γ'-Fe4N layer and interfacial spin scattering.