Impact ionization in nonuniformly heated silicon p+–n–n+ and n+–p–p+ structures

Research paper by A. M. Musaev

Indexed on: 15 May '16Published on: 15 May '16Published in: Semiconductors

Abstract

Experimental results on the effects of changes in the impact-ionization current in silicon diffusion p+–n–n+ and n+–p–p+ structures upon nonuniform heating are presented. It is shown that the revealed effects are associated with the transformation of band energy levels caused by thermoelastic stresses of the structures.

Impact ionization in nonuniformly heated silicon p+–n–n+ and n+–p–p+ structures

Abstract

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Parity alternation of ground-state P(n)(-) and P(n)(+) (n = 3-15) phosphorus clusters.

Current Instability in Four-Layer p–n–p–n -Structures

Experimental setup for studying N–N correlations in reaction d + 2H → n + n + p + p

Impact ionization in nonuniformly heated silicon p+–n–n+ and n+–p–p+ structures

Abstract

More like this:

Parity alternation of ground-state P(n)(-) and P(n)(+) (n = 3-15) phosphorus clusters.

Current Instability in Four-Layer p–n–p–n -Structures

Experimental setup for studying N–N correlations in reaction d + 2H → n + n + p + p

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