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Impact ionization in nonuniformly heated silicon p+–n–n+ and n+–p–p+ structures

Research paper by A. M. Musaev

Indexed on: 15 May '16Published on: 15 May '16Published in: Semiconductors



Abstract

Experimental results on the effects of changes in the impact-ionization current in silicon diffusion p+–n–n+ and n+–p–p+ structures upon nonuniform heating are presented. It is shown that the revealed effects are associated with the transformation of band energy levels caused by thermoelastic stresses of the structures.