Indexed on: 26 Apr '16Published on: 25 Apr '16Published in: Materials Letters
In this work, we demonstrate highly thermosensitive silicon nanowires (SiNWs) for thermal-sensing applications. Crystalline Si was amorphized by Focused Ion Beam in the fabrication process of the SiNWs, and subsequently recrystallized by a thermal annealing process to improve their electrical conductivity. A temperature coefficient of resistance (TCR) from -8,000 ppm/K to -12,000 ppm/K was measured for the SiNWs. This large negative TCR is attributed to the boundary potential barrier of 110 meV between silicon crystallites in the poly crystalline SiNWs.