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High thermosensitivity of silicon nanowires induced by amorphization

Research paper by Toan Dinh, Hoang-Phuong Phan, Takahiro Kozeki, Afzaal Qamar, Tatsuya Fujii, Takahiro Namazu, Nam-Trung Nguyen, Dzung Viet Dao

Indexed on: 26 Apr '16Published on: 25 Apr '16Published in: Materials Letters



Abstract

In this work, we demonstrate highly thermosensitive silicon nanowires (SiNWs) for thermal-sensing applications. Crystalline Si was amorphized by Focused Ion Beam in the fabrication process of the SiNWs, and subsequently recrystallized by a thermal annealing process to improve their electrical conductivity. A temperature coefficient of resistance (TCR) from -8,000 ppm/K to -12,000 ppm/K was measured for the SiNWs. This large negative TCR is attributed to the boundary potential barrier of 110 meV between silicon crystallites in the poly crystalline SiNWs.

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