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High-Pressure Band-Gap Engineering in Lead-Free Cs2AgBiBr6 Double Perovskite

Research paper by Dr. Qian Li, Dr. Yonggang Wang, Weicheng Pan, Prof. Wenge Yang, Prof. Bo Zou, Prof. Jiang Tang, Prof. Zewei Quan

Indexed on: 17 Nov '17Published on: 15 Nov '17Published in: Angewandte Chemie



Abstract

Novel inorganic lead-free double perovskites with improved stability are regarded as alternatives to state-of-art hybrid lead halide perovskites in photovoltaic devices. The recently discovered Cs2AgBiBr6 double perovskite exhibits attractive optical and electronic features, making it promising for various optoelectronic applications. However, its practical performance is hampered by the large band gap. In this work, remarkable band gap narrowing of Cs2AgBiBr6 is, for the first time, achieved on inorganic photovoltaic double perovskites through high pressure treatments. Moreover, the narrowed band gap is partially retainable after releasing pressure, promoting its optoelectronic applications. This work not only provides novel insights into the structure–property relationship in lead-free double perovskites, but also offers new strategies for further development of advanced perovskite devices.