Growth of single-crystal diamonds in microwave plasma
Indexed on: 28 Dec '12Published on: 28 Dec '12Published in: Plasma Physics Reports
Abstract
A microwave plasma (2.45 GHz) was used for depositing single crystal diamond layers at the deposition rate up to 40 μm/h in hydrogen-methane mixtures on the substrates from natural and synthetic diamond with the (100) deposition surface and with the size up to 5 × 5 mm. The structure and the defect-impurity composition of the fabricated single crystals with the thickness up to 600 μm have been investigated using Raman spectroscopy, photoluminescence spectroscopy, cathode luminescence spectroscopy, and electron and optical microscopy. A high quality and purity of the diamond layers deposited from a plasma was confirmed.
