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Forming mechanism of Te-based conductive-bridge memories

Research paper by M. KazarMendesab, E.Martinezab, A.Martyab, M.Veillerotab, Y.Yamashitac, R.Gassilloudab, M.Bernardab, O.Renaultab, N.Barrettd

Indexed on: 30 Oct '17Published on: 01 Jul '17Published in: Applied Surface Science



Abstract

•The resistive switching of Te-based conductive-bridge memories is investigated in a non-destructive way using hard X-ray photoelectron spectroscopy.•Results highlight the reduction of alumina correlated to the oxidation of zirconium at the ZrTe/Al2O3 interface.•Result also show an enrichment of elemental Te near this interface.•XPS depth profiling confirms the oxygen diffusion towards the top electrode.•A four-layer capacitor model is used to confirm the redox process located at the ZrTe/Al2O3 interface.