Formation of nanometer-scale InAs islands on silicon

Research paper by P. C. Sharma, K. W. Alt, D. Y. Yeh, D. Wang, K. L. Wang

Indexed on: 01 May '99Published on: 01 May '99Published in: Journal of Electronic Materials


Three dimensional islands of InAs have been grown on Si (100) by using molecular-beam epitaxy to obtain nanometer-scale quantum dots. Morphological examination by atomic force microscopy revealed the formation of islands with narrow size distributions and high densities. For an approximate coverage of 1.2 monolayers of lnAs beyond the growth mode transition, our observations of a rapid evolution of island morphology are explained in terms of strain relaxing mechanisms in the early stages of InAs/Si heteroepitaxy.